feb.2004 CM200DU-12NFH application high frequency switching use (30khz to 60khz). gradient amplifier, induction heating, power supply, etc. mitsubishi igbt modules CM200DU-12NFH high power switching use ? i c ................................................................... 200a ? v ces ............................................................ 600v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm c2e1 e2 c1 g2 e2 e1 g1 cm g1e1 e2 g2 c2e1 c1 e2 94 16 16 2.5 21.2 7.5 2.5 25 7 17 23 24 11 4 418 13 48 23 4 12 13.5 80 0.25 2 6.5 mounting holes 3?5nuts 12mm deep tab #110. t=0.5 30 +1 ?.5 label circuit diagram t c measured point
feb.2004 collector cutoff current gate leakage current collector-emitter saturation voltage (note 4) input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage thermal resistance *1 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 300v, i c = 200a, v ge = 15v v cc = 300v, i c = 200a v ge1 = v ge2 = 15v r g = 6.3 ? , inductive load switching operation i e = 200a i e = 200a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to fin, thermal compound applied *2 (1/2 module) tc measured point is just under the chips (1/2 module) i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 600 20 200 400 200 400 590 830 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 mitsubishi igbt modules CM200DU-12NFH high power switching use v v a a a a w w c c v n ?m n ?m g 1 0.5 2.7 55 3.6 2.0 250 150 500 150 150 2.6 0.21 0.35 0.15 *3 31 ma a nf nf nf nc ns ns ns ns c v c/w c/w c/w c/w ? 2.0 1.95 1240 3.5 0.07 3.1 6v v 57 ns i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r g symbol parameter v ge(th) v ce(sat) * 1 : t c measured point is shown in page outline drawing. * 2 : typical value is measured by using shin-etsu silicone ?-746? * 3 : if you use this value, r th(f-a) should be measured just under the chips. * 4 : t c ?measured point is just under the chips. note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. no short circuit capability is designed. collector-emitter voltage gate-emitter voltage maximum collector dissipation maximum collector dissipation junction temperature storage temperature isolation voltage weight g-e short c-e short operation pulse (note 2) operation pulse (note 2) t c = 25 c t c ?= 25 c *4 main terminal to base plate, ac 1 min. main terminal m5 mounting holes m6 typical value symbol parameter collector current emitter current mounting torque conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) p c ( note 3 ) t j t stg v iso unit typ. limits min. max. test conditions maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c)
feb.2004 mitsubishi igbt modules CM200DU-12NFH high power switching use performance curves output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) half-bridge switching characteristics (typical) switching time (ns) collector current i c (a) 400 350 300 100 250 200 50 150 0 02345 t j = 25 c v ge = 20v 1 1.5 2.5 3.5 4.5 0.5 15 8 7 7.5 8.5 13 11 10 9 9.5 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 250 300 350 400 v ge = 15v t j = 25 c t j = 125 c 5 4 3 2 1 4.5 3.5 2.5 1.5 0.5 0 20 12 14 6 8 10 16 18 t j = 25 c i c = 80a i c = 400a i c = 200a 10 1 10 0 10 1 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 c ies c oes c res v ge = 0v 10 1 2 3 5 7 10 3 10 2 2 3 5 7 10 1 10 2 57 10 3 23 57 23 conditions: v cc = 300v v ge = 15v r g = 6.3 ? t j = 125 c inductive load t d(off) t d(on) t f t r 10 1 2 3 5 7 10 2 2 3 5 7 10 3 0 0.5 1 1.5 2 2.5 3 t j = 25 c t j = 125 c
feb.2004 mitsubishi igbt modules CM200DU-12NFH high power switching use reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) transient thermal impedance characteristics (igbt part ) normalized transient thermal impedance z th (j c) time (s) transient thermal impedance characteristics (fwdi part) normalized transient thermal impedance z th (j c) time (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr conditions: v cc = 300v v ge = 15v r g = 6.3 ? t j = 25 c inductive load 10 3 10 5 10 4 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 3 23 57 23 57 23 57 23 57 10 1 10 2 10 1 10 0 10 3 10 3 7 5 3 2 10 2 7 5 3 2 10 1 23 57 23 57 single pulse t c = 25 c 10 3 10 5 10 4 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 3 23 57 23 57 23 57 23 57 10 1 10 2 10 1 10 0 10 3 10 3 7 5 3 2 10 2 7 5 3 2 10 1 23 57 23 57 single pulse t c = 25 c 0 4 8 16 12 20 v cc = 300v i c = 200a 0 200 800 1400 1800 1000 400 600 1200 1600 per unit base = r th(j c) = 0.21 c/w per unit base = r th(j c) = 0.35 c/w v cc = 200v
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